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Compact Mosfet Models for VLSI Design
Author(s): A. B. Bhattacharyya
ISBN: 9780470823422
No. of Pages: 512
Publishing Year: 2009
Binding: Hardback
Dimension: 25cm x 17cm
Weight: 910
Subject: Physics
Price:
Rs 0.00 $ 125.00 £ 0.00
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| About the Book:
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Compact Moseft Models for VLSI Design presents a unified view of MOSFET modeling, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies, as opposed to gaining familiarity with the models in isolation. Secondly, while MOS devices are well covered in a number of text books, device physics do not get necessarily linked to model parameters which serve as an input in design phase, leaving a wide gap between device understanding and its use for optimal circuit performance. Further, being technology driven, models undergo evolution continuously. Yet from the projection of International Technology Roadmap for Semiconductors (ITRS) it is possible to identify the core physical concepts that will drive the evolution and trend that is likely to dominate the future. Therefore, the impact of quantum mechanical related phenomena has been given more prominent presence in the pedagogic approach of this book than is available in currently available texts.
Key Features:
· Uses a unified approach to guide students through the confusing array of MOSFET models
· One of the first books to relate MOS physics with device models to better prepare practitioners for real-world design activities
· Helps fabless designers bridge the gap with off-site foundries
· Presents topics that will prepare readers for long term developments in the field
· Includes solutions in every chapter
· Can be tailored for use among students and professionals of many levels
· Comes with MATLAB code downloads for independent practice and advanced study
· Pedagogical support in the form of a 200+ page solutions manual and additional material elaborating topics discussed in the text
· Sample slides for course planning to be followed dynamically with updates
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| Contents: |
Preface
List of Symbols
1. Semiconductor Physics Review for MOSFET Modeling
2. Ideal Metal Oxide Semiconductor Capacitor
3. Non-ideal Non-classical MOS Capacitors
4. Long Channel MOS Transistor
5. The Scaled MOS Transistor
6. Quasistatic, Non-quasistatic, and Noise Models
7. Quantum Phenomena in MOS Transistors
8. Non-classical MOSFET Structures
9. Appendix A: Expression for Electric Field and Potential Variation in the Semiconductor Space Charge under the Gate
10. Appendix B: Features of Select Compact MOSFET Models
11. Appendix C: PSP Two-point Collocation Method
Index |
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